A prototype Solid State Drive architecture has recently been unveiled by a team of researchers lead by a professor of Chuo University which combines NAND flash with ReRAM components to boost performance while simultaneously cutting power draw by as much as 93%.
The prototype device writes eleven times faster than a standard multi-level cell NAND flash components, while also reducing power draw to just 7% of the current rival technology.
The massive performance boost is aided by the capabilities of ReRAM, which of course include read latency of less than 3μs per sector compared to the 85μs per page for MLC and write latency of less than 3μs per sector compared with 400μs per page for the fastest single-level cell (SLC) flash.
So, as I’m sure you tech buffs out there will agree, this looks like a very interesting piece of tech. The cut in power draw is particularly impressive, and I’m sure many people out there are already thinking away on the applications of the device.
For more information, check out Bit-Tech.
